Question

A pure semiconductor like \[\ce{Ge}\] or \[\ce{Si}\], when doped with a small amount of suitable impurity, becomes an extrinsic semiconductor. In thermal equilibrium, the electron and hole concentration in it are related to the concentration of intrinsic charge carriers. A p-type or n-type semiconductor can be converted into a p-n junction by doping it with suitable impurity. Two processes, diffusion and drift take place during formation of a p-n junction. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for the application of an external voltage. A p-n junction diode allows currents to pass only in one direction when it is forward biased. Due to this property, a diode is widely used to rectify alternating voltages, in half-wave or full wave configuration.

When \[\ce{Ge}\] is doped with pentavalent impurity, the energy required to free the weakly bound electron from the dopant is about ______.

पर्याय

• 0.001 eV

• 0.01 eV

• 0.72 eV

• 1.1 eV

Answer 1

When \[\ce{Ge}\] is doped with pentavalent impurity, the energy required to free the weakly bound electron from the dopant is about 0.01 eV.

Explanation:

When \[\ce{Ge}\] is doped with pentavalent impurity, it becomes an n-type semiconductor.