Question

A pure semiconductor like \[\ce{Ge}\] or \[\ce{Si}\], when doped with a small amount of suitable impurity, becomes an extrinsic semiconductor. In thermal equilibrium, the electron and hole concentration in it are related to the concentration of intrinsic charge carriers. A p-type or n-type semiconductor can be converted into a p-n junction by doping it with suitable impurity. Two processes, diffusion and drift take place during formation of a p-n junction. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for the application of an external voltage. A p-n junction diode allows currents to pass only in one direction when it is forward biased. Due to this property, a diode is widely used to rectify alternating voltages, in half-wave or full wave configuration.

During the formation of a p-n junction ______.

पर्याय

• electrons diffuse from p-region into n-region and holes diffuse from n-region into p-region.

• both electrons and holes diffuse from n-region into p-region.

• electrons diffuse from n-region into p-region and holes diffuse from p-region into n-region.

• both electrons and holes diffuse from p-region into n-region.

Answer 1

During the formation of a p-n junction electrons diffuse from n-region into p-region and holes diffuse from p-region into n-region.

Explanation:

In the creation of a p-n junction, electrons migrate from the n-region to the p-region, whereas holes move from the p-region to the n-region.