Question

A pure semiconductor like \[\ce{Ge}\] or \[\ce{Si}\], when doped with a small amount of suitable impurity, becomes an extrinsic semiconductor. In thermal equilibrium, the electron and hole concentration in it are related to the concentration of intrinsic charge carriers. A p-type or n-type semiconductor can be converted into a p-n junction by doping it with suitable impurity. Two processes, diffusion and drift take place during formation of a p-n junction. A semiconductor diode is basically a p-n junction with metallic contacts provided at the ends for the application of an external voltage. A p-n junction diode allows currents to pass only in one direction when it is forward biased. Due to this property, a diode is widely used to rectify alternating voltages, in half-wave or full wave configuration.

An ac voltage V = 0.5 sin (100 πt) volt is applied, in turn, across a half-wave rectifier and a full-wave rectifier. The frequency of the output voltage across them respectively will be ______.

पर्याय

• 25 Hz, 50 Hz

• 25 Hz, 100 Hz

• 50 Hz, 50 Hz

• 50 Hz, 100 Hz

Answer 1

An ac voltage V = 0.5 sin (100 πt) volt is applied, in turn, across a half-wave rectifier and a full-wave rectifier. The frequency of the output voltage across them respectively will be 50 Hz, 100 Hz.

Explanation:

V = 0.5 sin (100 πt)

So, ω = 100 π 

= 2 πf

⇒ f = 50Hz

Therefore, the frequency of the output voltage across the full-wave rectifier is 100 Hz.