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महाराष्ट्र राज्य शिक्षण मंडळएचएससी विज्ञान (सामान्य) इयत्ता ११ वी

Choose the correct option. A reverse-biased diode is equivalent to: - Physics

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प्रश्न

Choose the correct option.

A reverse-biased diode is equivalent to:

पर्याय

  • an off switch

  • an on switch

  • a low resistance

  • none of the above

MCQ

उत्तर

A reverse-biased diode is equivalent to: an off switch

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A p-n Junction Diode
  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 14: Semiconductors - Exercises [पृष्ठ २५६]

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बालभारती Physics [English] 11 Standard Maharashtra State Board
पाठ 14 Semiconductors
Exercises | Q 1. iv) | पृष्ठ २५६

संबंधित प्रश्‍न

Choose the correct option.

The potential barrier in p-n diode is due to:


Answer the following question.

What causes a larger current through a p-n junction diode when forward biased?


Answer in detail.

Explain the importance of the depletion region in a p-n junction diode.


Explain the I-V characteristic of a forward-biased junction diode.


In the following figures, the diodes are either forward biased or reversed biased. Choose the CORRECT statement:


The reading of the ammeter for a silicon diode in the given circuit is:


In case of p-n junction diode, the width of depletion region is ______.


Consider the junction diode as ideal. The value of current flowing through AB is ______.


If p - n junction diode is forward biased then ______.


The width of depletion layer of a p-n junction diode, when it is (i) forward biased and (ii) reverse biased respectively ______.


When p-n junction diode is reverse biased, then the width of the barrier potential will ______.


If p-njunction diode is reverse biased then ______.


In the circuit below, A and B represent two inputs and C represents the output. The circuit represents ______.


The region near the junction of an unbiased p-n junction diode is known as depletion layer. The layer is depleted of ______.


In a forward bias arrangement of a p-n junction diode, the ______.


At 0.3 V and 0.7 V, the diodes Ge and Si become conductors respectively. In the given figure, if the ends of diode Ge are overturned, the change in potential V0 will be ______.

 


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