Question

Diffusion in a p-n junction is due to ______.

पर्याय

• majority carriers

• concentration gradient

• minority carriers

• carrier injection

Answer 1

Diffusion in a p-n junction is due to concentration gradient.

Explanation:

The concentration of electrons in an n-type semiconductor is higher than the concentration of holes.
Similarly, the concentration of holes in a p-type semiconductor is higher than the concentration of electrons.
The electrons diffuse from the 'n' region to the 'p' region and the holes diffuse from the p region to the n region during the development of the p-n junction due to the concentration differential across the 'p' and 'n' sides.