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प्रश्न
Hole is ______.
पर्याय
an anti-particle of electron.
a vacancy created when an electron leaves a covalent bond.
absence of free electrons.
an artifically created particle.
उत्तर
Hole is a vacancy created when an electron leaves a covalent bond.
Explanation:
Concept of holes in the semiconductor:
- When an electron is removed from a covalent bond, it leaves a vacancy behind. An electron from a neighbouring atom can move into this vacancy, leaving the neighbour with a vacancy. In this way, the vacancy formed is called a hole (or cotter) and can travel through the material and serve as an additional current carrier.
- A hole is considered a seat of positive charge, having a magnitude of charge equal to that of an electron.
- Holes act as a virtual charge, although there is no physical charge on them.
- The effective mass of a hole is more than an electron.
- The mobility of a hole is less than an electron.
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संबंधित प्रश्न
In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration niis given by
`"n"_"i" = "n"_0 exp(- "E"_"g"/(2"k"_"BT"))`
where n0 is a constant.
Answer in detail.
Distinguish between intrinsic semiconductors and extrinsic semiconductors.
Let nh and ne be the number of holes and conduction electrons respectively in a semiconductor. Then ______.
In a semiconductor, the number of holes and number of free electrons are represented as 'nh' and 'ne' respectively. Which one of the following statements is TRUE for the semiconductor?
Explain the following term:
Intrinsic semiconductor
An intrinsic semiconductor has a resistivity of 0.50 Ω m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m2V-1S-1 and O.11 m2 v-1S-1 respectively:
What is meant by doping of an intrinsic semiconductor?
Name the two types of atoms used for doping of Ge/Si.
A pure semiconductor has equal electron and hole concentration of 1016 m-3. Doping by indium increases nh to 5 × 1022 m-3. Then, the value of ne in the doped semiconductor is ______.
Answer the following giving reasons:
Impurities are added to intrinsic semiconductors.
