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A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. lt can detect a signal of wavelength ______. -

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Question

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. lt can detect a signal of wavelength ______.

Options

  • 6000 A°

  • 4000 nm

  • 6000 nm

  • 4000 A°

MCQ
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Solution

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. lt can detect a signal of wavelength 4000 A°.

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