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Question
In case of p-n junction diode, the width of depletion region is ______.
Options
decreased with heavy doping
increased by reverse biasing
decreased with light doping
increased by forward biasing
Solution
In case of p-n junction diode, the width of depletion region is increased by reverse biasing.
Explanation:
When a p-n junction diode is reverse biassed, the reverse voltage helps to support the barrier potential, increasing the breadth of the depletion layer.
As the forward voltage opposes the potential barrier in forward biassing, the width narrows.
If the diode is further doped severely, the breadth of the depletion region grows as the charge carrier mobility reduces.
In addition, when the p-n junction is light doped, the diameter of the depletion region expands due to the increased potential barrier.
