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Applied Physics 1 CBCGS 2016-2017 BE Civil Engineering Semester 1 (FE First Year) Question Paper Solution

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Applied Physics 1 [CBCGS]
Marks: 60 University of Mumbai
BE Civil Engineering
BE Computer Engineering
BE Mechanical Engineering
BE Biotechnology
BE Marine Engineering
BE Printing and Packaging Technology
BE Production Engineering
BE IT (Information Technology)
BE Electrical Engineering
BE Electronics and Telecommunication Engineering
BE Instrumentation Engineering
BE Electronics Engineering
BE Chemical Engineering
BE Construction Engineering
BE Biomedical Engineering
BE Automobile Engineering

Academic Year: 2016-2017
Date: June 2017
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[15]1
[3]1.a

Draw the unit cell of HCP structure and work out the no. of atoms per unit cell.

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Chapter: [1] Crystal Structure
[3]1.b

The mobility of holes is 0.025m2 /V-sec. what would be the resistivity of n- type Si if the Hall coefficient of the sample is 2.25× 10-5m3/C. 

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Chapter: [3] Semiconductor Physics
[3]1.c

What is the principle of solar cell? Write its advantages and disadvantages

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Chapter: [1] Crystal Structure
[3]1.d

An electron is confined in a box of dimension 1A°. calculate minimum uncertainty in its velocity.

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Chapter: [2] Quantum Mechanics
[3]1.e

Explain the factors on which reverberation time depends .

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Chapter: [6] Acoustics
[3]1.f

Explain cavitation effect. 

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Chapter: [7] Ultrasonics
[3]1.g

What is Maglev? How it can have very high speed?

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Chapter: [4] Superconductivity
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[15]2
[8]2.a

Draw the following : (1,-1,3) ,(2,0,0) , [0,0,-1]
An electron is accelerated through 1200 volts and is reflected from a crystal. The second order reflection occurs when glancing angle is 60°. Calculate the inter planar spacing of the crystal.

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Chapter: [1] Crystal Structure
[7]2.b

Explain the concept of fermi level. Prove that the Fermi level exactly at the centre of the Forbidden energy gap in intrinsic semiconductor.

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Chapter: [3] Semiconductor Physics
[15]3
[8]3.a

Find the following parameter for DC(Diamond Cubic) structure:- 
⦁ No. of atoms per unit cell.
⦁ Co-ordination number.
⦁ Nearest atomic distance.
⦁ Atomic radius.
⦁ APF.

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Chapter: [1] Crystal Structure
[7]3.b

Define drift current, diffusion current and P-N junction. The electrical conductivity of a pure silicon at room temperature is 4×10-4 mho/m . if the mobility of electron is 0.14m2 /V-S and that of hole is 0.04m2 /V-S. calculate the intrinsic
carrier density.

 

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Chapter: [3] Semiconductor Physics
[15]4
[5]4.a

Distinguish between Type I and Type II superconductor.

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Chapter: [3] Semiconductor Physics
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[5]4.b

A classroom has dimension 10×8×6m3. the reverberation time is 3 sec. calculate the total absorption of surface and average absorption. 

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Chapter: [6] Acoustics
[5]4.c

Explain the principle, construction and working of a Magnetostriction Oscillator.

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Chapter: [7] Ultrasonics
[15]5
[5]5.a

Write Fermi Dirac distribution function. With the help of diagram. Explain the variation of Fermi level with temperature in n-type semiconductor.

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Chapter: [3] Semiconductor Physics
[5]5.b

Derive Schrodinger time dependent wave equation for matter waves. 

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Chapter: [2] Quantum Mechanics
[5]5.c

Find the depth of sea water from a ship on the sea surface it the time interval of two seconds is required to receive the signal back. Given that: temperature of sea water is 20℃, salinity of sea water is 10gm/lit. 

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Chapter: [3] Semiconductor Physics
[15]6
[5]6.a

Define the critical temperature. Slow that in the superconducting state the material is perfectly diamagnetic. 

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Chapter: [4] Superconductivity
[5]6.b

In a solid the energy level is lying 0.012 eV below Fermi level. What is the probability of this level not being occupied by an electron 27℃?

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Chapter: [3] Semiconductor Physics
[5]6.c

What is the wavelength of a beam of neutron having:
⦁ An energy of 0.025 eV?
⦁ An electron and photon each have wavelength of 2A°. what are their momentum and energy ? mn = 1.676×10 -27 kg, h = 6.625×10 -34 J-sec. 

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Chapter: [2] Quantum Mechanics

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