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प्रश्न
Choose the correct option.
The potential barrier in p-n diode is due to:
विकल्प
depletion of positive charges near the junction
accumulation of positive charges near the junction
depletion of negative charges near the junction
accumulation of positive and negative charges near the junction
उत्तर
The potential barrier in p-n diode is due to: accumulation of positive and negative charges near the junction
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संबंधित प्रश्न
Answer the following question.
What causes a larger current through a p-n junction diode when forward biased?
Answer in detail.
Explain the importance of the depletion region in a p-n junction diode.
Explain the I-V characteristic of a forward-biased junction diode.
In the following figures, the diodes are either forward biased or reversed biased. Choose the CORRECT statement:
The reading of the ammeter for a silicon diode in the given circuit is:
In case of p-n junction diode, the width of depletion region is ______.
Consider the junction diode as ideal. The value of current flowing through AB is ______.
Figure shows two p-n junction diodes along with a resistance R and a dc battery E. The path of flow of appreciable current in the circuit is,
If p - n junction diode is forward biased then ______.
Assuming that the junction diode is ideal, the current in the arrangement shown in
The width of depletion layer of a p-n junction diode, when it is (i) forward biased and (ii) reverse biased respectively ______.
When p-n junction diode is reverse biased, then the width of the barrier potential will ______.
If p-njunction diode is reverse biased then ______.
In the circuit below, A and B represent two inputs and C represents the output. The circuit represents ______.
The region near the junction of an unbiased p-n junction diode is known as depletion layer. The layer is depleted of ______.
In a forward bias arrangement of a p-n junction diode, the ______.
At 0.3 V and 0.7 V, the diodes Ge and Si become conductors respectively. In the given figure, if the ends of diode Ge are overturned, the change in potential V0 will be ______.
