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प्रश्न
Let np and ne be the numbers of holes and conduction electrons in an extrinsic semiconductor.
विकल्प
np > ne
np = ne
np < ne
np ≠ ne
उत्तर
np ≠ ne
Extrinsic semiconductors are formed by doping either an n-type material or a p-type material with a pure semiconductor, Thus, it may have more number of holes (if the doping material is of p type) or more number of electrons (if the doping material is of ntype).
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संबंधित प्रश्न
In an intrinsic semiconductor the energy gap Egis 1.2 eV. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 600K and that at 300K? Assume that the temperature dependence of intrinsic carrier concentration niis given by
`"n"_"i" = "n"_0 exp(- "E"_"g"/(2"k"_"BT"))`
where n0 is a constant.
Answer in detail.
Distinguish between intrinsic semiconductors and extrinsic semiconductors.
Let nh and ne be the number of holes and conduction electrons respectively in a semiconductor. Then ______.
Explain the following term:
Intrinsic semiconductor
An intrinsic semiconductor has a resistivity of 0.50 Ω m at room temperature. Find the intrinsic carrier concentration if the mobilities of electrons and holes are 0.39 m2V-1S-1 and O.11 m2 v-1S-1 respectively:
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Why is doping of intrinsic semiconductors necessary?
What is meant by doping of an intrinsic semiconductor?
Name the two types of atoms used for doping of Ge/Si.
A pure semiconductor has equal electron and hole concentration of 1016 m-3. Doping by indium increases nh to 5 × 1022 m-3. Then, the value of ne in the doped semiconductor is ______.
Answer the following giving reasons:
Impurities are added to intrinsic semiconductors.
- Assertion (A): The resistance of an intrinsic semiconductor decreases with an increase in its temperature.
- Reason (R): The number of conduction electrons as well as hole increase in an intrinsic semiconductor with the rise in its temperature.
