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प्रश्न
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
पर्याय
both increases.
both decreases.
copper increases and silicon decreases.
copper decreases and silicon increases.
उत्तर
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of copper decreases and silicon increases.
Explanation:
The resistance of copper wire increases with temperature, which causes a drop in conductivity, while the resistance of silicon wire reduces with temperature, which causes an increase in conductivity.
संबंधित प्रश्न
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
A donor impurity results in ______.
Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.
In n-type semiconductor, the fifth electron ______.
In n-type semiconductor majority carriers and minority carriers are respectively ______.
The conductivity of a semiconductor increases with increase in temperature because ______.
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
- Assertion (A): Putting the p-type semiconductor slab directly in physical contact with the n-type semiconductor slab cannot form the pn junction.
- Reason (R): The roughness at contact will be much more than inter atomic crystal spacing and continuous flow of charge carriers is not possible.
The majority charge carriers in a P-type semiconductor are ______.
