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प्रश्न
The formation of the depletion region in a p-n junction diode is due to ______.
पर्याय
movement of dopant atoms
diffusion of both electrons and holes
drift of electrons only
the drift of holes only
उत्तर
The formation of the depletion region in a p-n junction diode is due to the diffusion of both electrons and holes.
Explanation:
Charge diffusion is what creates the depletion area. holes diffuse across the junction from the p-side to the n-side due to the concentration gradient, whereas electrons diffuse from the n-side to the p-side. Near the junction, the holes and the electrons that are diffusely moving in the same direction unite.
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संबंधित प्रश्न
Write the two processes that take place in the formation of a p-n junction.
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
The drift current in a p-n junction is
The diffusion current in a p-n junction is
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
In a semiconductor diode, the barrier potential offers opposition to only ______.
