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Applied Physics 1 CBCGS 2018-2019 BE Civil Engineering Semester 1 (FE First Year) Question Paper Solution

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Applied Physics 1 [CBCGS]
Marks: 60 University of Mumbai
BE Civil Engineering
BE Computer Engineering
BE Mechanical Engineering
BE Biotechnology
BE Marine Engineering
BE Printing and Packaging Technology
BE Production Engineering
BE IT (Information Technology)
BE Electrical Engineering
BE Electronics and Telecommunication Engineering
BE Instrumentation Engineering
BE Electronics Engineering
BE Chemical Engineering
BE Construction Engineering
BE Biomedical Engineering
BE Automobile Engineering

Academic Year: 2018-2019
Date: December 2018
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[15]1 | Attempt any five from the following .
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[3]1.a
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[1]1.a.1

Draw (123)

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Chapter: [1] Crystal Structure
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[1]1.a.2

Draw(321)

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Chapter: [1] Crystal Structure
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[1]1.a.3

Draw (102)

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Chapter: [1] Crystal Structure
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[3]1.b

Explain with Diagram Hcp Unit Cell Based on Lattice Parameters.

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Chapter: [1] Crystal Structure
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[3]1.c

State properties of matter waves.

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Chapter: [2] Quantum Mechanics
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[3]1.d

Calculate electron & hole concentration in intrinsic Si at room temperature if
its electrical conductivity is 4x10-4 mho/m.Given that mobility of electron=
0.14m2/V-sec and  mobility of holes=0.04m2/V-sec.

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Chapter: [3] Semiconductor Physics
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[3]1.e

Explain Meissner Effect with the help of diagram.

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Chapter: [4] Superconductivity
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[3]1.f

A conference room has a total volume of 2000 m3.The magnitude of total
absorption with in the conference room is100 Sabin.Calculate thereverberation time.

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Chapter: [6] Acoustics
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[3]1.g

Discuss any three applications of Ultrasonic waves

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Chapter: [7] Ultrasonics
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[15]2 | attempt following questions
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[8]2.a

State Heisenberg's Uncertainty Principle. Show that electron doesn'texist in
the nucleus.Find the accuracy in the position of an electron moving with speed 350
m/sec with uncertainty of 0.01%.

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Chapter: [2] Quantum Mechanics
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[7]2.b

Show that for intrinsic semiconductors of the Fermi level lies midway between the conduction band and the valence band .With the help of diagram explain effect of impurity concentration on Fermi level of N type semiconductor.

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Chapter: [3] Semiconductor Physics
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[15]3 | Attempt following questions.
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[8]3.a

Derive Bragg's condition for X-ray diffraction. Monochromatic X rays are
incident on a crystal. If the first order rejection is observed at an angle of 3.4•, at
what angle would second order reflection expected.

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Chapter: [1] Crystal Structure
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[7]3.b

Derive an expression for Hall voltage and Hall coefficient with neat labelled diagram.

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Chapter: [3] Semiconductor Physics
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[15]4 | Attempt following questions
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[5]4.a

Differentiate between Type-1 & Type- II Superconductors.

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Chapter: [4] Superconductivity
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[5]4.b

Discuss in details any three factors affecting acoustics of a hall with their
remedies.

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Chapter: [6] Acoustics
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[5]4.c

A quartz crystal of thickness 1 mm is vibrating at resonance. Calculate its fundamental frequency. (Assume that for quartz, Y= 7.9x 1010 N/m2 and p = 2.650 gm/cc.

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Chapter: [1] Crystal Structure
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[15]5 | Attempt following questions
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[5]5.a

Define Ligancy. Find the value of critical radius ratio for Ligancy 3.

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Chapter: [1] Crystal Structure
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[5]5.b

For an electron passing through potential difference V, show that its
wavelength is; 

λ = 12.26/√V A°.

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Chapter: [2] Quantum Mechanics
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[5]5.c

What is the probability of an electron being thermally excited to conduction
band in Si at 27cC.The band gap energy is 1.12 eV.

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Chapter: [3] Semiconductor Physics
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[15]6 | Attempt following questions
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[5]6.a

Explain Point defects in crystals.

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Chapter: [1] Crystal Structure
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[5]6.b

Show that group velocity of matter waves associated with a particle is equal to
the particle velocity(Vgroup=Vparticle)

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Chapter: [2] Quantum Mechanics
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[5]6.c

Explain the principle, construction and working of Light Emitting Diode.

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Chapter: [2] Quantum Mechanics

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