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A Zener Diode is Fabricated by Heavily Doping Both P- and N- Sides of the Junction. Explain, Why? - Physics

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प्रश्न

A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?

उत्तर

It is a heavily doped p-n junction. As a result, the depletion region formed is very thin and the electric field of the junction is extremely high even for a small reverse bias voltage.  

The I-V characteristics of a Zener diode are shown in the figure below:

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p-n Junction
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
2016-2017 (March) Delhi Set 2

संबंधित प्रश्न

If the two ends of a p-n junction are joined by a wire,


The diffusion current in a p-n junction is


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


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