Advertisements
Advertisements
प्रश्न
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
विकल्प
circuit 1 and circuit 2
circuit 2 and circuit 3
circuit 3 and circuit 1
circuit 1 only.
उत्तर
circuit 2 and circuit 3
In circuit 1, one diode is forward biassed and the other diode is reverse biassed.
The forward-biassed diode offers zero resistance (ideally) to the current flow, so it can be replaced by a short circuit. The voltage drop across the first diode will be zero. The second diode is reverse biassed, so it can be replaced by an open circuit; hence, the voltage drop across this diode will be maximum.
In circuit 2, both the diodes are forward biassed, so they can be replaced by short circuits; hence, the voltage drop across both of them will be minimum and equal.
In circuit 3, both the diodes are reverse biassed, so both can be replaced by open circuits; hence, the voltage drop across both of them will be maximum and equal.
APPEARS IN
संबंधित प्रश्न
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
The drift current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
Find the currents through the resistance in the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
The depletion layer in the p-n junction diode is caused by ______.
p-n junction diode is formed
