Advertisements
Advertisements
प्रश्न
Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?
उत्तर
We cannot measure the potential barrier across a p-n junction by a voltmeter because the resistance of the voltmeter is very high compared to the junction resistance. Potential of potential barrier for Ge is VB = 0.3 V and for silicon is VB = 0.7 V.
On average the potential barrier in the P-N junction is ~0.5 V.
APPEARS IN
संबंधित प्रश्न
Draw its I – V characteristics of photodiode
Plot a graph showing variation of current versus voltage for the material GaAs ?
Why is a zener diode considered as a special purpose semiconductor diode?
A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
Answer the following question.
Why photodiodes are required to operate in reverse bias? Explain.
In Figure, Vo is the potential barrier across a p-n junction, when no battery is connected across the junction ______.
In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.
Write the property of a junction diode which makes it suitable for rectification of ac voltages.
Describe briefly the following term:
breakdown voltage in reverse biasing
Draw a labelled characteristic curve (l-V graph) for a semiconductor diode during forward bias.
