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Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction? - Physics

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Question

Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?

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Solution

We cannot measure the potential barrier across a p-n junction by a voltmeter because the resistance of the voltmeter is very high compared to the junction resistance. Potential of potential barrier for Ge is VB = 0.3 V and for silicon is VB = 0.7 V.

On average the potential barrier in the P-N junction is ~0.5 V.

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Chapter 14: Semiconductor Electronics - Exercises [Page 91]

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NCERT Exemplar Physics [English] Class 12
Chapter 14 Semiconductor Electronics
Exercises | Q 14.19 | Page 91

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  1. In the given figure, a diode D is connected to an external resistance R = 100 Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:

    (a) 40 mA
    (b) 20 mA
    (c) 35 mA
    (d) 30 mA
  2. In which of the following figures, the pn diode is reverse biased?
    (a)

    (b)

    (c)

    (d)
  3. Based on the V-I characteristics of the diode, we can classify the diode as:
    (a) bilateral device
    (b) ohmic device
    (c) non-ohmic device
    (d) passive element
    OR
    Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:

    (a) in the circuits (1) and (2)
    (b) in the circuits (2) and (3)
    (c) in the circuits (1) and (3)
    (d) only in the circuit (1)


  4. The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at I = 15 mA to the resistance at V = -10 V is
    (a) 100
    (b) 106
    (c) 10
    (d) 10-6

With reference to a semiconductor diode, define the potential barrier.


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