Advertisements
Advertisements
Question
The dynamic plate resistance of a triode value is 10 kΩ. Find the change in the plate current if the plate voltage is changed from 200 V to 220 V.
Solution
Given:-
Plate resistance,
`r_p=10kOmega=10^4Omega`
Change in plate voltage,
`deltaV_p=220-200=20V`
Plate resistance at constant grid voltage is given as:-
\[r_P = \left(\frac{\delta V_P}{\delta I_P}\right)_{V_G = Constant} \]
\[ \Rightarrow \delta I_P = \frac{\delta V_P}{r_P}\]
\[\delta I_P = \frac{\delta V_p}{r_P}\]
\[\delta I_P = \frac{20}{{10}^4} = 0 . 002 A = 2\text{ mA}\]
APPEARS IN
RELATED QUESTIONS
Explain the working of P-N junction diode in forward and reverse biased mode.
Draw its I – V characteristics of photodiode
Plot a graph showing variation of current versus voltage for the material GaAs ?
In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.
Answer the following question.
Why photodiodes are required to operate in reverse bias? Explain.
Diffusion in a p-n junction is due to ______.
With reference to Semiconductor Physics,
Name the diode that emits spontaneous radiation when forward biased.
What are the applications of p - n Junction diode?
The drift current in a p-n junction is from the ______.
The expected energy of the electron at absolute zero is called:-
When an electric field is applied across a semiconductor ______.
- electrons move from lower energy level to higher energy level in the conduction band.
- electrons move from higher energy level to lower energy level in the conduction band.
- holes in the valence band move from higher energy level to lower energy level.
- holes in the valence band move from lower energy level to higher energy level.
Can the potential barrier across a p-n junction be measured by simply connecting a voltmeter across the junction?
 (a) |
 (b) |
- Name the type of a diode whose characteristics are shown in figure (A) and figure (B).
- What does the point P in figure (A) represent?
- What does the points P and Q in figure (B) represent?
Draw V-I characteristics of a p-n Junction diode.
Write the property of a junction diode which makes it suitable for rectification of ac voltages.
Describe briefly the following term:
minority carrier injection in forward biasing.
Describe briefly the following term:
breakdown voltage in reverse biasing
