Advertisements
Advertisements
प्रश्न
The energy required by an electron to jump the forbidden band in silicon at room temperature is about ______.
विकल्प
0.01 eV
0.05 eV
0.7 eV
1.1 eV
उत्तर
The energy required by an electron to jump the forbidden band in silicon at room temperature is about 1.1 eV.
Explanation:
For pure Si, the band gap or forbidden gap is 1.1 eV. An electron must therefore have this much energy to jump the forbidden band in Si at room temperature.
APPEARS IN
संबंधित प्रश्न
When an electron goes from the valence band to the conduction band in silicon, its energy is increased by 1.1 eV. The average energy exchanged in a thermal collision is of the order of kT which is only 0.026 eV at room temperature. How is a thermal collision able to take some to the electrons from the valence band to the conduction band?
Electric conduction in a semiconductor takes place due to
An electric field is applied to a semiconductor. Let the number of charge carries be nand the average drift speed by v. If the temperature is increased,
When a semiconducting material is doped with an impurity, new acceptor levels are created. In a particular thermal collision, a valence electron receives an energy equal to 2kT and just reaches one of the acceptor levels. Assuming that the energy of the electron was at the top edge of the valence band and that the temperature T is equal to 300 K, find the energy of the acceptor levels above the valence band.
Suppose the energy liberated in the recombination of a hole-electron pair is converted into electromagnetic radiation. If the maximum wavelength emitted is 820 nm, what is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Find the maximum wavelength of electromagnetic radiation which can create a hole-electron pair in germanium. The band gap in germanium is 0.65 eV.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is 6 × 1019 per cubic metref conduction electrons increases to 2 × 1023 per cubic metre. Find the concentration of the holes in the doped germanium.. When some phosphorus impurity is doped into a germanium sample, the concentration o
If the lattice constant of this semiconductor is decreased, then which of the following is correct?
An n-type semiconductor is
In a common base configuration Ie = 1 mA α = 0.95 the value of base current is
