Advertisements
Advertisements
प्रश्न
Draw the circuit diagram to study the characteristic of the transistor in common emitter mode. Draw the input and output characteristics.
उत्तर
- Circuit to study Common Emitter (CE) characteristic:
- The Input characteristics:
- The output characteristics:
APPEARS IN
संबंधित प्रश्न
Why is the base of a transistor made thin and is lightly doped?
Why are the emitter, the base, and the collector of a BJT doped differently?
The common-base DC current gain of a transistor is 0.967. If the emitter current is 10mA. What is the value of base current?
Which method of biasing is used for operating a transistor as an amplifier?
The principle based on which a solar cell operates is ____________.
The light emitted in an LED is due to
The output of the following circuit is 1 when the input ABC is
Explain the current flow in an NPN transistor.
Explain the need for a feedback circuit in a transistor oscillator.
What is rectification?
Transistor functions as a switch. Explain.
Assuming VCEsat = 0.2 V and β = 50, find the minimum base current (IB) required to drive the transistor given in the figure to saturation.
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, calculate the emitter-collector voltage VEC (in volts).
A common emitter amplifier is designed with n-p-n transistor (α = 0.99). The input impedance is 1 kΩ and the load is 10 kΩ. The voltage gain will be ______
In the symbol for a transistor, the arrow head points in the direction of the ____________.
Ve, Vb, and Ve are emitter, base, and collector voltage respectively for npn transistor in CE mode. Amplifier works for the combination of biasing voltage equal to ______.
In an npn transistor, the base current is 100 µA and the collector current is 10 mA. The emitter current is ______.
ln switching circuit, transistor is in ON state and values of IC and IB are 4.2 mA and 5 µA respectively and RC= l k`Omega` and RB= 300 k`Omega`. If VBE = 0.5 V, find the value of VBB.
In a transistor in CE configuration, the ratio of power gain to voltage gain is ____________.
In a silicon transistor, a change of 7.89 mA in the emitter current if produces a change of 7.8 mA in the collector current, then the base current must change by ____________.
In a transistor, a change of 8.0 mA in the emitter current produces a change of 7.8 mA in the collector current. Then change in the base current is ____________.
The current gain `alpha` of a transistor is 0.95. The change in collector current corresponding to a change of 0.4 mA in the base current in a common emitter arrangement is ______.
In transistor amplifier, base-emitter junction is forward biased and collector emitter junction is reverse biased. The current gain is ______.
In common emitter mode of transistor, the d.c. current gain is 20, the emitter current is 7 mA. The collector current is ______.
A transistor is connected in C - E mode. If collector current is 72 × 10-5 A and α = 0.96, then base current will be ______.
For a transistor, αdc and βdc are the current ratios, then the value of `(beta_"dc"-delta_"dc")/(alpha_"dc".beta_"dc")`
In a p-n-p transistor circuit, the collector current is 10 mA. If 90% of the holes emitted from the emitter reach the collector, ______.
A common emitter amplifier circuit built using an n-p-n transistor is shown in the figure. Its DC current gain is 300, RC = 4 kΩ and VCC = 20 V. What is the minimum base current for VCE to reach saturation?
In a CE amplifier, the current gain is 80 and the emitter current is 9 mA. The base current is ______.
