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प्रश्न
Write the important considerations which are to be taken into account while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED, if it is required to emit light in the visible range? Draw a circuit diagram and explain its action.
उत्तर
While fabricating a pn-junction diode to be used as LED, the important consideration which are to be taken
are as follows:
(i) It should be heavily doped.
(ii) It should be forward biased.
(iii) It should be encapsulated with a transparent cover so that emitted light can come out.
(iv) It must have a proper band gap so that the emitted radiations lie in the visible region.
LEDs that can emit red, yellow, orange, green and blue light are commercially available. The semiconductor used for fabrication of visible LEDs must at least have a band gap of 1.8 eV (spectral range of visible light is from about 0.4 μm to 0.7 μm, i.e., from about 3 eV to 1.8 eV). The compound semiconductor Gallium Arsenide – Phosphide (GaAs1–xPx) is used for making LEDs of different colours. GaAs0.6 P0.4 (Eg ~ 1.9 eV) is used for red LED.
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संबंधित प्रश्न
A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?
The width of depletion region of p-n junction diode is _______.
(A) 0.5 nm to 1 nm
(B) 5 nm to 10 nm
(C) 50 nm to 500 nm
(D) 500 nm to 1000 nm
State its any ‘two’ uses of photodiode.
Describe briefly, with the help of a diagram, the role of the two important processes involved in the formation of a p-n junction ?
Draw the circuit diagram of an illuminated photodiode in reverse bias. How is photodiode used to measure light intensity?
Draw the circuit arrangement for studying the V-I characteristics of a p-n junction diode in reverse bias. Plot the V-I characteristics in this case.
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