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प्रश्न
Explain how a potential barrier is developed in a p-n junction diode.
उत्तर १
During the formation of p-n junction, and due to the concentration gradient across p-, and n- sides, holes
diffuse from p-side to n-side (p → n) and electrons diffuse from n-side to p-side (n → p). This motion of charge carries gives rise to diffusion current across the junction. When an electron diffuses from n → p, it leaves behind an ionised donor on n-side. This ionised donor (positive charge) is immobile as it is bonded to the surrounding atoms. As the electrons continue to diffuse from n → p, a layer of positive charge (or positive space-charge region) on n-side of the junction is developed.
उत्तर २
In a p-n junction diode, holes are the majority carriers on the p side whereas electrons are the majority carriers on the n-side of the semiconductor. Due to the diffusion of majority carriers from p-region to n-region, the p-region becomes less positive and n-region becomes less negative. An imaginary voltage is developed across the junction which prevents further movement of majority carriers across the junction. The voltage so developed is known as the potential barrier.
संबंधित प्रश्न
If a small voltage is applied to a p-n junction diode, how will the barrier potential be affected when it is (i) forward biased
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Reverse biasing
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