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If a Small Voltage is Applied to a P-n Junction Diode, How Will the Barrier Potential Be Affected When It is Forward Biased - Physics

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प्रश्न

If a small voltage is applied to a p-n junction diode, how will the barrier potential be affected when it is (i) forward biased

उत्तर

If a small voltage is applied to a p–n junction diode in the forward bias, then the barrier potential decreases.

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2014-2015 (March) Panchkula Set 3

वीडियो ट्यूटोरियलVIEW ALL [3]

संबंधित प्रश्न

Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in

Reverse biasing

How are these characteristics made use of in rectification?


A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?


The width of depletion region of p-n junction diode is _______.

(A) 0.5 nm to 1 nm

(B) 5 nm to 10 nm

(C) 50 nm to 500 nm

(D) 500 nm to 1000 nm

 


State its any ‘two’ uses of photodiode.


Describe, with the help of a circuit diagram, the working of a photodiode.


Briefly explain its working. Draw its V - I characteristics for two different intensities of illumination ?


Draw V − I characteristics of a p-n junction diode. Answer the following questions, giving reasons:

(i) Why is the current under reverse bias almost independent of the applied potential up to a critical voltage?

(ii) Why does the reverse current show a sudden increase at the critical voltage?

Name any semiconductor device which operates under the reverse bias in the breakdown region.


The plate resistance of a triode is 8 kΩ and the transconductance is 2.5 millimho. (a) If the plate voltage is increased by 48 V and the grid voltage is kept constant, what will be the increase in the plate current? (b) With plate voltage kept constant at this increased value, by how much should the grid voltage be decreased in order to bring the plate current back to its initial value?


Answer the following question.
Draw solar cell V-I characteristics.


With reference to Semiconductor Physics,

Name the process that causes depletion region in a p-n junction.


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