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प्रश्न
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
उत्तर
1. The reverse breakdown voltages of LEDs are very low, typically around 5V. So care should be taken while fabricating a pn-junction diode so that the high reverse voltages do not appear across them.
2. There is very little resistance to limit the current in LED. Therefore, a resistor must be used in series with the LED to avoid any damage to it.
The semiconductor used for fabrication of visible LEDs must at least have a band gap of 1.8 eV (spectral range of visible light is from about 0.4 μm to 0.7 μm, i.e., from about 3 eV to 1.8 eV).
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संबंधित प्रश्न
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
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(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.
Find the currents through the resistance in the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
