Advertisements
Advertisements
प्रश्न
Distinguish between intrinsic and extrinsic semiconductor. (Give any two points).
उत्तर
Intrinsic semiconductors | Extrinsic semiconductors | |
1) | Semiconductor in the pure form is known as intrinsic semiconductor. |
The semiconductor, resulting from mixing of impurity in it, is known as extrinsic semiconductor |
2) | Their conductivity is low | Their conductivity is high. |
3) | Its electrical conductivity is a function of temperature alone. |
Its electrical conductivity depends upon the temperature as well as on the quantity of impurity atoms doped in the structure |
4) | The number of free electrons in conduction band is equal to the number of holes in valence band. |
In these semiconductors, number of free electrons and number of holes are unequal |
5) | These are not practically used | These are practically used |
6) | In these, the Fermi energy level lies in the middle of valence band and conduction band. | In these, the Fermi energy level shifts towards valence or conduction energy band. |
APPEARS IN
संबंधित प्रश्न
In a p-type semiconductos, which of the following statement is true:
The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that ni= 1.5 × 1016 m−3. Is the material n-type or p-type?
In a p-type semiconductor, the acceptor impurity produces an energy level ______
A donor impurity results in ______.
Semiconductors formed by doping germanium (Ge) with aluminium (Z = 13) and antimony (Z = 51) are ______.
In n-type semiconductor, the fifth electron ______.
When p-n junction diode is forward biased, then ______.
State how a p-type semiconductor will be obtained from a pure crystal of a semiconductor.
Explain the following term:
Extrinsic semiconductor
Distinguish between n-type and p-type semiconductors.
The conductivity of a semiconductor increases with increase in temperature because ______.
Sn, C, and Si, Ge are all group XIV elements. Yet, Sn is a conductor, C is an insulator while Si and Ge are semiconductors. Why?
Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 1028 atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 1016 m–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.
The figure shows a piece of pure semiconductor S in series with a variable resistor R and a source of constant voltage V. Should the value of R be increased or decreased to keep the reading of the ammeter constant, when semiconductor S is heated? Justify your answer
Two crystals C1 and C2, made of pure silicon, are doped with arsenic and aluminium respectively.
Identify the extrinsic semiconductors so formed.
- Statement I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
- Statement II: The n-type semiconductor has net negative charge. In the light of the above statements, choose the most appropriate answer from the options given below:
In an extrinsic semiconductor, the number density of holes is 4 × 1020 m-3. If the number density of intrinsic carriers is 1.2 × 1015 m-3, the number density of electrons in it is ______.
Pieces of copper and of silicon are initially at room temperature. Both are heated to temperature T. The conductivity of ______.
With an increase in the temperature, the electrical conductivity of a semiconductor ______.
What type of semiconductor is obtained when a crystal of silicon is doped with a trivalent element?