Advertisements
Advertisements
Question
Read the following paragraph and answer the questions.
LED is a heavily doped P-N junction which under forward bias emits spontaneous radiation. When it is forward-biased, due to recombination of holes and electrons at the junction, energy is released in the form of photons. In the case of Si and Ge diode, the energy released in recombination lies in the infrared region. LEDs that can emit red, yellow, orange, green and blue light are commercially available. The semiconductor used for fabrication of visible LEDs must at least have a band gap of 1.8 eV. The compound semiconductor Gallium Arsenide – Phosphide is used for making LEDs of different colours.
|
- Why are LEDs made of compound semiconductor and not of elemental semiconductors?
- What should be the order of bandgap of an LED, if it is required to emit light in the visible range?
- A student connects the blue coloured LED as shown in the figure. The LED did not glow when switch S is closed. Explain why?
OR
iii. Draw V-I characteristic of a p-n junction diode in
(i) forward bias and (ii) reverse bias
Solution
- LEDs are made up of compound semiconductors and not by the elemental conductor because the band gap in the elemental conductor has a value that can detect the light of a wavelength which lies in the infrared (IR) region.
- 1.8 eV to 3 eV
- LED is reversed-biased that is why it is not glowing.
OR
iii. (i) forward bias -
(ii) reverse bias
APPEARS IN
RELATED QUESTIONS
If a small voltage is applied to a p-n junction diode, how will the barrier potential be affected when it is (i) forward biased
With what considerations in view, a photodiode is fabricated? State its working with the help of a suitable diagram.
Even though the current in the forward bias is known to be more than in the reverse bias, yet the photodiode works in reverse bias. What is the reason?
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Forward biasing
How are these characteristics made use of in rectification?
Using the necessary circuit diagrams, show how the V-I characteristics of a p-n junction are obtained in
Reverse biasing
How are these characteristics made use of in rectification?
Describe briefly, with the help of a diagram, the role of the two important processes involved in the formation of a p-n junction ?
Write the important considerations which are to be taken into account while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of the band gap of an LED, if it is required to emit light in the visible range? Draw a circuit diagram and explain its action.
Answer the following question.
Explain the three processes involved in solar cell working.
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. lt can detect a signal of wavelength ______.
Which one of the following is not the advantage of LED?
The value of power dissipated across the Zener diode (Vz = 15 V) connected in the circuit as shown in the figure is x × 10–1 watt. The value of x, to the nearest integer, is ______.