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प्रश्न
Draw V-I characteristics of a p-n Junction diode.
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संबंधित प्रश्न
With reference to semiconductor devices, define a p-type semiconductor and a Zener diode.
Show on a graph, the variation of resistivity with temperature for a typical semiconductor.
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
The dynamic plate resistance of a triode value is 10 kΩ. Find the change in the plate current if the plate voltage is changed from 200 V to 220 V.
When we apply reverse biased to a junction diode, it
Avalanche breakdown is due to ______.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
Describe briefly the following term:
minority carrier injection in forward biasing.
Describe briefly the following term:
breakdown voltage in reverse biasing
