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Each of the Resistance Shown in Figure Has a Value of 20 ω. Find the Equivalent Resistance Between A And B. Does It Depend on Whether the Point A Or B Is at Higher Potential? - Physics

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प्रश्न

Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?

टीपा लिहा

उत्तर

According to the Wheatstone bridge principle, if the bridge is balanced, then the current flow across the central resistor is zero. So, to simplify the circuit, we can remove the central resistor.
The given circuit is also balanced, so there is no current through the diode.
Hence, the net resistance of the circuit is given by

\[R_P  = \frac{R_1 R_2}{R_1 + R_2}\] 

\[\text{For  } R_1  =  R_2  = R, \] 

\[ R_P  = \frac{R}{2} = \frac{40}{2}\] 

\[ \Rightarrow  R_P  = 20   \Omega\]

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p-n Junction
  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

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एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
पाठ 23 Semiconductors and Semiconductor Devices
Exercises | Q 24 | पृष्ठ ४२०

संबंधित प्रश्‍न

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


Write the two processes that take place in the formation of a p-n junction.


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Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


Diffusion current in a p-n junction is greater than the drift current in magnitude


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


The current−voltage characteristic of an ideal p-n junction diode is given by \[i =  i_0 ( e^{eV/KT}  - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT}  = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


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Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


In a semiconductor diode, the barrier potential offers opposition to only ______.


p-n junction diode is formed


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