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प्रश्न
Diffusion current in a p-n junction is greater than the drift current in magnitude
पर्याय
if the junction is forward-biased
if the junction is reverse-biased
if the junction is unbiased
in no case.
उत्तर
if the junction is forward-biassed
In the forward biassing of a p−n junction, the positive terminal of the battery is connected to the p side of the p−n junction and the negative terminal of the battery is connected to the n side of the p−n junction. As a result, electrons in the n side of the p−njunction are repelled by the negative terminal of the battery and move to the p side, where the positive terminal of the battery attracts the electrons. Similarly, holes from the p side of the p−n junction are repelled by the positive terminal of the battery and move to the n side, where the negative terminal of the battery attracts the holes. Thus, they give diffusion current across the p−n junction.
In case of reverse biassing, no conduction takes place across the junction because of the diffusion of majority carriers. Hence, there is no diffusion current.
If the junction is unbiased, then diffusion current is initially maximum. But at equilibrium, diffusion current becomes equal to drift current.
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संबंधित प्रश्न
Write the two processes that take place in the formation of a p-n junction.
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
The drift current in a p-n junction is
The diffusion current in a p-n junction is
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
The formation of the depletion region in a p-n junction diode is due to ______.
