Extrinsic Semiconductor

The number of silicon atoms per m³ is 5 × 10²⁸. This is doped simultaneously with 5 × 10²² atoms per m³ of Arsenic and 5 × 10²⁰ per m³ atoms of Indium. Calculate the number of electrons and holes. Given that n_i= 1.5 × 10¹⁶ m⁻³. Is the material n-type or p-type?

With an increase in the temperature, the electrical conductivity of a semiconductor ______.

The majority charge carriers in a P-type semiconductor are ______.

Suppose a ‘n’-type wafer is created by doping Si crystal having 5 × 10²⁸ atoms/m3 with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ‘P’ region in this wafer. Considering n i = 1.5 × 10¹⁶ m^–3, (i) Calculate the densities of the charge carriers in the n and p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

A donor impurity results in ______.

The conductivity of a semiconductor increases with increase in temperature because ______.

When p-n junction diode is forward biased, then ______.

Explain the following term:

Extrinsic semiconductor