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Consider a P-n Junction Diode Having the Characteristic I − I 0 ( E E V / K T − 1 ) Where I 0 = 20 μ a . the Diode is Operated at T = 300 K . Find the Current Through the Diode When a Voltage - Physics

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प्रश्न

Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?

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उत्तर

(a) Given:-

Drift current, i0 = 20 × 10−6 A

Temperature, T = 300 K

Applied voltage, V = 300 mV

The variation in the current with respect to the voltage is given by

\[i =  i_0 \left( e^\frac{eV}{KT} - 1 \right)\]

\[ \Rightarrow i = 20 \times  {10}^{- 6} \left( e^\frac{0 . 3}{8 . 62 \times 300 \times {10}^{- 5}} - 1 \right)\]

\[ \Rightarrow i = 20 \times  {10}^{- 5} \left( e^\frac{100}{8 . 61} - 1 \right)\]

\[ \Rightarrow i = 2 . 18  A \approx 2  \] A


(b) We need to find the voltage at which the current doubles so that the new value of the current becomes 4 A.

\[\Rightarrow 4 = 20 \times  {10}^{- 6} \left( e^\frac{eV}{8 . 62 \times 3 \times {10}^{- 3}} - 1 \right)\]

\[ \Rightarrow  e^\frac{V \times {10}^3}{8 . 62 \times 3}  - 1 = \frac{4 \times {10}^6}{20}\]

\[ \Rightarrow  e^\frac{V \times {10}^3}{8 . 62 \times 3}  = 200001\]

\[ \Rightarrow \frac{V \times {10}^3}{8 . 62 \times 3} = 12 . 2060\]

\[ \Rightarrow V = \frac{12 . 206 \times 8 . 63 \times 3}{{10}^3}\]

\[ \Rightarrow V = 318  \] mV

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p-n Junction
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

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एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
अध्याय 23 Semiconductors and Semiconductor Devices
Exercises | Q 22 | पृष्ठ ४२०

संबंधित प्रश्न

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

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(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


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(c) holes and conduction electrons recombine continuously throughout the material
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(d) a p-n junction


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(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


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(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


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Answer in detail.

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p-n junction diode is formed


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