Advertisements
Advertisements
प्रश्न
The plate current in a diode is 20 mA when the plate voltage is 50 V or 60 V. What will be the current if the plate voltage is 70 V?
उत्तर
For 50 V or 60 V, the plate current is 20 mA. That means 20 mA is the saturation current.
At the given temperature, the plate current is 20 mA for all other values of voltages.
Thus, the current at 70 V will be 20 mA.
APPEARS IN
संबंधित प्रश्न
(i) Explain with the help of a diagram the formation of depletion region and barrier potential in a pn junction.
Explain the working of P-N junction diode in forward and reverse biased mode.
What happens when a forward bias is applied to a p-n junction?
What causes the setting up of high electric field even for small reverse bias voltage across the diode?
In the following diagram 'S' is a semiconductor. Would you increase or decrease the value of R to keep the reading of the ammeter A constant when S is heated? Give reason for your answer.
Draw its I – V characteristics of photodiode
Plot a graph showing variation of current versus voltage for the material GaAs ?
Why is a zener diode considered as a special purpose semiconductor diode?
In a photo diode, the conductive increases when the material is exposed to light. It is found that the conductivity changes only if the wavelength is less than 620 nm. What is the band gap?
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p \infty V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.
Depletion layer in p - n junction diode consists of
In forward bias width of potential barrier in a p + n junction diode
The expected energy of the electron at absolute zero is called:-
In the circuit shown in figure, if the diode forward voltage drop is 0.3 V, the voltage difference between A and B is ______.
Consider an npn transistor with its base-emitter junction forward biased and collector base junction reverse biased. Which of the following statements are true?
- Electrons crossover from emitter to collector.
- Holes move from base to collector.
- Electrons move from emitter to base.
- Electrons from emitter move out of base without going to the collector.
The breakdown in a reverse biased p–n junction diode is more likely to occur due to ______.
- large velocity of the minority charge carriers if the doping concentration is small.
- large velocity of the minority charge carriers if the doping concentration is large.
- strong electric field in a depletion region if the doping concentration is small.
- strong electric field in the depletion region if the doping concentration is large.
Differentiate between the threshold voltage and the breakdown voltage for a diode.
Answer the following giving reasons:
A p-n junction diode is damaged by a strong current.
Draw the circuit arrangement for studying V-I characteristics of a p-n junction diode in (i) forward biasing and (ii) reverse biasing. Draw the typical V-I characteristics of a silicon diode.
