English

With Reference to Semi Conductor Devices, Define a P - Type Semiconductor and a Zener Diode. What is the Use of Zener Diode ? - Physics (Theory)

Advertisements
Advertisements

Question

With reference to semiconductor devices, define a p-type semiconductor and a Zener diode.

Solution

When a trivalent impurity like aluminium, indium, boron, gallium, etc., is doped with pure germanium
(or silicon) , then the conductivity of the crystal increases due to its deficiency of electrons i.e., holes and such a crystal is said to be p-type semiconductor while the impurity atoms are called acceptors.
A Zener diode is a reverse biased heavily doped p - n junction diode, which is operated in the breakdown region, where the current is limited by both external resistance and power dissipation of the diode.

shaalaa.com
  Is there an error in this question or solution?
2017-2018 (March) Set 1

Video TutorialsVIEW ALL [2]

RELATED QUESTIONS

With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.


What causes the setting up of high electric field even for small reverse bias voltage across the diode?


What is the use of Zener diode?


With reference to a semiconductor diode, what is meant by: 
(i) Forward bias
(ii) Reverse bias
(iii) Depletion region


The drift current in a p-n junction is from the ______.


The nature of binding for a crystal with alternate and evenly spaced positive and negatively ions is


In the depletion region of a diode ______.

  1. there are no mobile charges.
  2. equal number of holes and electrons exist, making the region neutral.
  3. recombination of holes and electrons has taken place.
  4. immobile charged ions exist.

Differentiate between the threshold voltage and the breakdown voltage for a diode.


Explain the formation of the barrier potential in a p-n junction.


Read the following paragraph and answer the questions that follow.

A semiconductor diode is basically a pn junction with metallic contacts provided at the ends for the application of an external voltage. It is a two-terminal device. When an external voltage is applied across a semiconductor diode such that the p-side is connected to the positive terminal of the battery and the n-side to the negative terminal, it is said to be forward-biased. When an external voltage is applied across the diode such that the n-side is positive and the p-side is negative, it is said to be reverse-biased. An ideal diode is one whose resistance in forward biasing is zero and the resistance is infinite in reverse biasing. When the diode is forward biased, it is found that beyond forward voltage called knee voltage, the conductivity is very high. When the biasing voltage is more than the knee voltage the potential barrier is overcome and the current increases rapidly with an increase in forward voltage. When the diode is reverse biased, the reverse bias voltage produces a very small current of about a few microamperes which almost remains constant with bias. This small current is a reverse saturation current.
  1. In the given figure, a diode D is connected to an external resistance R = 100 Ω and an emf of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be:

    (a) 40 mA
    (b) 20 mA
    (c) 35 mA
    (d) 30 mA
  2. In which of the following figures, the pn diode is reverse biased?
    (a)

    (b)

    (c)

    (d)
  3. Based on the V-I characteristics of the diode, we can classify the diode as:
    (a) bilateral device
    (b) ohmic device
    (c) non-ohmic device
    (d) passive element
    OR
    Two identical PN junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be:

    (a) in the circuits (1) and (2)
    (b) in the circuits (2) and (3)
    (c) in the circuits (1) and (3)
    (d) only in the circuit (1)


  4. The V-I characteristic of a diode is shown in the figure. The ratio of the resistance of the diode at I = 15 mA to the resistance at V = -10 V is
    (a) 100
    (b) 106
    (c) 10
    (d) 10-6

Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×