हिंदी

With the Help of Neat Labelled Circuit Diagram Explain The Working of Half Wave Rectifier Using Semiconductor Diode. - Physics

Advertisements
Advertisements

प्रश्न

With the help of neat labelled circuit diagram explain the working of half wave rectifier using semiconductor diode. Draw the input and output waveforms.

उत्तर

A device which converts A.C. to D.C. is called rectifier. In this case output exists only for half cycle hence it is called half wave rectifier. Construction: The circuit diagram of a half wave rectifier using a junctiondiode is as shown in fig. The alternating voltage source is connected to the primary coil of a transformer. The secondary coil is connected to the diode in series with a resistance RL called the load resistance

                                

T=Transformer

D=Diode

V0=output voltage

v1=input votage

RL=load resistance

Working: In first cycle of input voltage, the anode of the diode is positive potential w.r.t. cathode. Hence the diode is in forward-biased. Hence it conduct current. The current flows through load resistance giving voltage drop iRL. This voltage drop is called output voltage. During next half cycle the anode of diode is in negative potential w.r.t. Hence it is in reversed-biased. Hence it does not conduct the current. Hence current does not flow through load resistance giving no P.D. across it. Hence output voltage is unidirectional. It is called as D.C.

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
2012-2013 (March)

वीडियो ट्यूटोरियलVIEW ALL [2]

संबंधित प्रश्न

What causes the setting up of high electric field even for small reverse bias voltage across the diode?


Draw its I – V characteristics of photodiode


Show on a graph, the variation of resistivity with temperature for a typical semiconductor.


Why is a zener diode considered as a special purpose semiconductor diode?


With reference to semi-conductors answer the following : 

(i) What is the change in the resistance of the semi-conductor with increase in temperature ?

(ii) Name the majority charge carriers in n-type semi-conductor.

(iii) What is meant by doping ?


A plate current of 10 mA is obtained when 60 volts are applied across a diode tube. Assuming the Langmuir-Child relation \[i_p  \infty  V_p^{3/2}\] to hold, find the dynamic resistance rp in this operating condition.


The power delivered in the plate circular of a diode is 1.0 W when the plate voltage is 36 V. Find the power delivered if the plate voltage is increased to 49 V. Assume Langmuir-Child equation to hold.


Answer the following question.
Why photodiodes are required to operate in reverse bias? Explain.


Basic materials used in the present solid state electronic devices like diode, transistor, ICs, etc are ______.


What are the applications of p - n Junction diode?


The current through an ideal PN-junction shown in the following circuit diagram will be:


A – pn junction has a depletion layer of thickness .of the order of


Depletion layer in p - n junction diode consists of


Use a transistor as an amplition


On increasing the reverse biases voltage to a large value in a P – N junction diode-current


In a semiconductor diode, the barrier potential offers opposition to only


Avalanche breakdown is due to ______.


In the depletion region of a diode ______.

  1. there are no mobile charges.
  2. equal number of holes and electrons exist, making the region neutral.
  3. recombination of holes and electrons has taken place.
  4. immobile charged ions exist.

A Zener of power rating 1 W is to be used as a voltage regulator. If zener has a breakdown of 5 V and it has to regulate voltage which fluctuated between 3 V and 7 V, what should be the value of Rs for safe operation (Figure)?


In the circuit shown in figure, when the input voltage of the base resistance is 10 V, Vbe is zero and Vce is also zero. Find the values of Ib, Ic and β.


Consider a box with three terminals on top of it as shown in figure (a):


(a)

Three components namely, two germanium diodes and one resistor are connected across these three terminals in some arrangement. A student performs an experiment in which any two of these three terminals are connected in the circuit shown in figure (b).


(b)

The student obtains graphs of current-voltage characteristics for unknown combination of components between the two terminals connected in the circuit. The graphs are

(i) when A is positive and B is negative


(c)

(ii) when A is negative and B is positive


(d)

(iii) When B is negative and C is positive

(e)

(iv) When B is positive and C is negative


(f)

(v) When A is positive and C is negative


(g)

(vi) When A is negative and C is positive


(h)

From these graphs of current-voltage characteristics shown in figure (c) to (h), determine the arrangement of components between A, B and C.


The graph of potential barrier versus width of depletion region for an unbiased diode is shown in graph A. In comparison to A, graphs B and C are obtained after biasing the diode in different ways. Identify the type of biasing in B and C and justify your answer

‘A’ ‘B’ ‘C’

Draw V-I characteristics of a p-n Junction diode.


Explain the formation of the barrier potential in a p-n junction.


Answer the following giving reasons:

A p-n junction diode is damaged by a strong current.


Describe briefly the following term:

minority carrier injection in forward biasing.


With reference to a semiconductor diode, define the potential barrier.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×